12.09.2013

Raith e-LiNE


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Name and Model (Year of Manufacture/Installation)

Raith e-LiNE  (-05/-05)

General Information

Electron beam lithography: min. feature size < 20 nm
High resolution SEM imaging: resolution < 10 nm
Maximum sample size:

Key Specifications        

 

Property
Measured Factory Spec
Filament Schottky TFE
Beam size 1.8 nm @ 20 keV 2 nm @ 20 keV

3.5 nm @ 1 kev 4 nm @ 1 keV
Beam current range
5 pA – 20 nA
Beam energy 100 ev – 30 keV
Current stability
<1.2 % in 11 h
max. 0.5 % / h
Min. feature size
18.2 nm line
20 nm
Min. grating periodicity 73 nm period with
32.4 nm line
100 nm period with
50 nm line
Stitching accuracy |mean|+3σ = 36 nm
(100 µm write field, 10 keV)
|mean|+3σ < 60 nm
(100 µm write field, 10 keV)
Overlay accuracy |mean|+3σ = 39 nm |mean|+3σ < 40 nm
Height sensing reproducibility 0.74 µm < 1 µm

 

Key Features
  • TFE gun
  • Cross over free beam path
  • High beam current density
  • Compound objective lens for lowest beam aberrations
  • Digital controlled electron optics column
  • Fast electrostatic beam blanking
  • 45 mm laser interferometer stage
  • True closed loop piezo control for finest sample position
  • 2 nm XY position resolution at any WD, WF size and SEM magn
  • WFs from 0.5 µm to 2mm with automated calibration and selection
  • 10 MHz DSP controlled high speed
  • pattern processor

 

  • System control software
  • Multi user interface
  • SEM inspection software
  • Image archieving software
  • Dimensional metrology software
  • Integrated GDSII editor
  • Proximity effect correction
  • Data postprocessor

 

Location, Responsible Person

NSC clean room,  Kimmo Kinnunen



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