Kimmo Niskanen

Tutkijatohtori

Yksikkö

Matemaattis-luonnontieteellinen tiedekunta

Laitos / Vastuualue

Fysiikan laitos

Sähköposti

kimmo.h.niskanen@jyu.fi

Matkapuhelin

+358503501660

Julkaisut

Julkaisu

2025

Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800 V and 4500 V SiC Power MOSFETs

IEEE Transactions on Nuclear Science.

Sengupta, A.

Martinella, C.

Ball, D. R.

Niskanen, K.

Senarath, A. S.

Islam, S.

Harris, P. M.

Hutson, J. M.

Osheroff, J. M.

Sternberg, A. L.

Kettunen, H.

Kosier, S. L.

Grossner, U.

Javanainen, A.

Galloway, K. F.

Schrimpf, R. D.

Witulski, A. F.

Julkaisu

2025

Gate Current Stress for Detecting Neutron-Induced Degradation in SiC Power MOSFETs

IEEE International Reliability Physics Symposium.

Niskanen, K.

Javanainen, A.

Kettunen, H.

Cazzaniga, C.

Kastriotou, M.

Frost, C.

Julkaisu

2025

Proton Energy Dependence of SiC Power MOSFET Single Event Burnout Sensitivity

IEEE Transactions on Nuclear Science.

Niskanen, K.

Javanainen, A.

Martinella, C.

Hajdas, W.

Grossner, U.

Kettunen, H.

Julkaisu

2025

Single Event Effects of SiC power MOSFETs : from neutron interaction to destruction at the die level

IEEE Transactions on Nuclear Science.

Germanicus, Rosine Coq

Michez, Alain

Niskanen, Kimmo

Chaudhary, Mahima

Bascoul, Guillaume

Chazal, Vanessa

Wrobel, Frederic

Boch, Jerome

Julkaisu

2025

Temperature Dependence of Heavy Ion Induced Leakage Current in SiC Power MOSFETs

IEEE Transactions on Nuclear Science.

Niskanen, K.

Martinella, C.

Sengupta, A.

Harris, P. M.

Witulski, A. F.

Kettunen, H.

Javanainen, A.

Julkaisu

2024

AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs

Solid State Phenomena.

Germanicus, Rosine Coq

Phulpin, Tanguy

Niskanen, Kimmo

Michez, Alain

Lüders, Ulrike

Julkaisu

2024

SiC MOSFET structure at the die level with AFM sMIM Mode

IEEE Workshop on Wide Bandgap Power Devices & Applications. ... IEEE Workshop on Wide Bandgap Power Devices and Applications.

Coq Germanicus, Rosine

Chaudhary, Mahima

Niskanen, Kimmo

Larose, Xavier

Chazal, Vanessa

Bascoul, Guillaume

Julkaisu

2023

Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs

IEEE Transactions on Nuclear Science.

Niskanen, Kimmo

Kettunen, Heikki

Lahti, Mikko

Rossi, Mikko

Jaatinen, Jukka

Söderström, Daniel

Javanainen, Arto

Julkaisu

2023

Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET

IEEE Transactions on Nuclear Science.

Niskanen, Kimmo

Kettunen, Heikki

Söderström, Daniel

Rossi, Mikko

Jaatinen, Jukka

Javanainen, Arto

Julkaisu

2023

SiC MOSFET Micro-Explosion Due to a Single Event Burnout : Analysis at the Device and Die Levels

International Symposium for Testing and Failure Analysis. ASM International.

Coq Germanicus, Rosine

Phulpin, Tanguy

Rogaume,Thomas

Niskanen, Kimmo

Froissart, Sandrine

Latry, Olivier

Michez, Alain

Lüders, Ulrike

Kimmo Niskanen

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