Kimmo Niskanen

Publication

2025

Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800 V and 4500 V SiC Power MOSFETs

IEEE Transactions on Nuclear Science.

Sengupta, A.

Martinella, C.

Ball, D. R.

Niskanen, K.

Senarath, A. S.

Islam, S.

Harris, P. M.

Hutson, J. M.

Osheroff, J. M.

Sternberg, A. L.

Kettunen, H.

Kosier, S. L.

Grossner, U.

Javanainen, A.

Galloway, K. F.

Schrimpf, R. D.

Witulski, A. F.

Publication

2025

Gate Current Stress for Detecting Neutron-Induced Degradation in SiC Power MOSFETs

IEEE International Reliability Physics Symposium.

Niskanen, K.

Javanainen, A.

Kettunen, H.

Cazzaniga, C.

Kastriotou, M.

Frost, C.

Publication

2025

Proton Energy Dependence of SiC Power MOSFET Single Event Burnout Sensitivity

IEEE Transactions on Nuclear Science.

Niskanen, K.

Javanainen, A.

Martinella, C.

Hajdas, W.

Grossner, U.

Kettunen, H.

Publication

2025

Single Event Effects of SiC power MOSFETs : from neutron interaction to destruction at the die level

IEEE Transactions on Nuclear Science.

Germanicus, Rosine Coq

Michez, Alain

Niskanen, Kimmo

Chaudhary, Mahima

Bascoul, Guillaume

Chazal, Vanessa

Wrobel, Frederic

Boch, Jerome

Publication

2025

Temperature Dependence of Heavy Ion Induced Leakage Current in SiC Power MOSFETs

IEEE Transactions on Nuclear Science.

Niskanen, K.

Martinella, C.

Sengupta, A.

Harris, P. M.

Witulski, A. F.

Kettunen, H.

Javanainen, A.

Publication

2024

AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs

Solid State Phenomena.

Germanicus, Rosine Coq

Phulpin, Tanguy

Niskanen, Kimmo

Michez, Alain

Lüders, Ulrike

Publication

2024

SiC MOSFET structure at the die level with AFM sMIM Mode

IEEE Workshop on Wide Bandgap Power Devices & Applications. ... IEEE Workshop on Wide Bandgap Power Devices and Applications.

Coq Germanicus, Rosine

Chaudhary, Mahima

Niskanen, Kimmo

Larose, Xavier

Chazal, Vanessa

Bascoul, Guillaume

Publication

2023

Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs

IEEE Transactions on Nuclear Science.

Niskanen, Kimmo

Kettunen, Heikki

Lahti, Mikko

Rossi, Mikko

Jaatinen, Jukka

Söderström, Daniel

Javanainen, Arto

Publication

2023

Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET

IEEE Transactions on Nuclear Science.

Niskanen, Kimmo

Kettunen, Heikki

Söderström, Daniel

Rossi, Mikko

Jaatinen, Jukka

Javanainen, Arto

Publication

2023

SiC MOSFET Micro-Explosion Due to a Single Event Burnout : Analysis at the Device and Die Levels

International Symposium for Testing and Failure Analysis. ASM International.

Coq Germanicus, Rosine

Phulpin, Tanguy

Rogaume,Thomas

Niskanen, Kimmo

Froissart, Sandrine

Latry, Olivier

Michez, Alain

Lüders, Ulrike

Publications

Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800 V and 4500 V SiC Power MOSFETs

Gate Current Stress for Detecting Neutron-Induced Degradation in SiC Power MOSFETs

Proton Energy Dependence of SiC Power MOSFET Single Event Burnout Sensitivity

Single Event Effects of SiC power MOSFETs : from neutron interaction to destruction at the die level

Temperature Dependence of Heavy Ion Induced Leakage Current in SiC Power MOSFETs

AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs

SiC MOSFET structure at the die level with AFM sMIM Mode

Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs

Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET

SiC MOSFET Micro-Explosion Due to a Single Event Burnout : Analysis at the Device and Die Levels

Radiation Effects and Industrial Applications