Novel synthetic approaches for high-quality wafer-scale transition metal dichalcogenides
Vesa-Matti Hiltunen
Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
Two-dimensional transition-metal dichalcogenides (TMDs) have attracted significant attention due to their unique properties, which make them highly promising for a variety of applications ranging from quantum technologies, to electronic and photonic applications. In this context, developing scalable methods for high-quality synthesis is a major research priority, with chemical vapor deposition (CVD) emerging as the most promising method. In this talk, I will describe our latest results in improving the quality of CVD grown monolayer tungsten disulfide (WS2) by substrate treatment, and outline some approaches for better layer control and increased crystal size of CVD and metal-organic CVD grown wafer-scale WS2.
This project has received funding from the European Union’s Horizon Europe research and innovation programme under grant agreement No 101130384 (QUONDENSATE).
