Radiation Effects and Industrial Applications

The group specializes in applied research on nuclear- and accelerator-based technology and operates the Radiation Effects Facility, RADEF, for the studies of radiation effects in electronics and related materials. RADEF has been an ESA supported European Component Irradiation Facility (ECIF) since 2005. Since then irradiation tests have been carried out not only for ESA and the European space industry, but also for other world leading space organizations (e.g. NASA, JAXA, CNES), institutes, companies and universities.

Overview

Core fields of research

Basic natural phenomena and mathematical thinking

Research areas

Nuclear and accelerator based physics

Faculty

Faculty of Mathematics and Science

Department

Department of Physics

Research group description

RADEF’s specialty is to provide high penetration heavy ion cocktail beams, protons in wide energy range and energetic electrons. For these the RADEF group utilizes combination of JYFL's ECR ion sources and K-130 cyclotron, and the LINAC electron accelerator. Because the emerging technologies make integrated circuits more susceptible to radiation, the group is expanding its research activities toward the radiation effects in avionics and ground level systems.

Current

Members

Research group

Group leaders

Heikki Kettunen

Staff Scientist (teachresea)

Arto Javanainen

Senior Researcher

Members

Postdoctoral Researcher

Publications

Publication

2023

Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs

Materials Science Forum.

Martinella, Corinna

Bathen, Marianne

Javanainen, Arto

Grossner, Ulrike

Publication

2023

PIPS Diode Test Setup for Heavy Ion Beam Spectral Characterization

IEEE Transactions on Nuclear Science.

Borel, Thomas

Costantino, Alessandra

Muschitiello, Michele

Kettunen, Heikki

Standaert, Laurent

Santin, Giovanni

Pinto, Marco

Rizzo, Marta

Pesce, Anastasia

Ferlet-Cavrois, Véronique

Publication

2023

Proton Direct Ionization in Sub-Micron Technologies : Test Methodologies and Modelling

IEEE Transactions on Nuclear Science.

Lüdeke, Sascha

Cardenas, Gabriel Duran

Hajdas, Wojtek

Jaatinen, Jukka

Kettunen, Heikki

Poivey, Christian

Rossi, Mikko

Tanios, Bendy

Vogiatzi Stergiani, Marina

Javanainen, Arto

Publication

2023

Proton direct ionization upsets at tens of MeV

IEEE Transactions on Nuclear Science.

Coronetti, Andrea

Alia, Ruben Garcia

Lucsanyi, David

Wang, Jialei

Saigne, Frederic

Javanainen, Arto

Leroux, Paul

Prinzie, Jeffrey

Publication

2023

Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET

IEEE Transactions on Nuclear Science.

Niskanen, Kimmo

Kettunen, Heikki

Söderström, Daniel

Rossi, Mikko

Jaatinen, Jukka

Javanainen, Arto

Publication

2023

SiC MOSFET Micro-Explosion Due to a Single Event Burnout : Analysis at the Device and Die Levels

International Symposium for Testing and Failure Analysis. ASM International.

Coq Germanicus, Rosine

Phulpin, Tanguy

Rogaume,Thomas

Niskanen, Kimmo

Froissart, Sandrine

Latry, Olivier

Michez, Alain

Lüders, Ulrike

Publication

2023

Technology Dependence of Stuck Bits and Single Event Upsets in 110, 72, and 63-nm SDRAMs

IEEE Transactions on Nuclear Science.

Söderström, Daniel

Matana Luza, Lucas

Martins Pio De Mattos, André

Gil, Thierry

Kettunen, Heikki

Niskanen, Kimmo

Javanainen, Arto

Dilillo, Luigi

Publication

2022

Evaluation of radiation stability of electron beam irradiated Nafion® and sulfonated poly(ether ether ketone) membranes

Polymer Degradation and Stability.

Pajuste, E.

Reinholds, I.

Vaivars, G.

Antuzevičs, A.

Avotiņa, L.

Sprūģis, E.

Rossi, Mikko

Kettunen, Heikki

Meri, R.M.

Kaparkalējs, R.

Publication

2022

Heavy Ion and Proton Induced SEUs in Very Deep Sub-Micron Technologies

European Conference on Radiation and its Effects on Components and Systems. IEEE.

Tanios, Bendy

Cárdenas, Gabriel Durán

Lüdeke, Sascha

Javanainen, Arto

Poivey, Christian

Publication

2022

Heavy-ion induced single event effects and latent damages in SiC power MOSFETs

Microelectronics Reliability.

Martinella, C.

Natzke, P.

Alia, R.G.

Kadi, Y.

Niskanen, K.

Rossi, M.

Jaatinen, J.

Kettunen, H.

Tsibizov, A.

Grossner, U.

Javanainen, A.

Publication

2022

Impact of Aging Degradation on Heavy-ion SEU Response of 28 nm UTBB FD-SOI Technology

IEEE Transactions on Nuclear Science.

Mounir Mahmoud, M.

Prinzie, J.

Söderström, D.

Niskanen, K.

Pouget, V.

Cathelin, A.

Clerc, S.

Leroux, P.

Publication

2022

Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes under Heavy Ion Irradiation

IEEE Transactions on Nuclear Science.

Roed, Ketil

Eriksen, Dag Oistein

Ceccaroli, Bruno

Martinella, Corinna

Javanainen, Arto

Reshanov, Sergey

Massetti, Silvia