Radiation Effects and Industrial Applications

The group specializes in applied research on nuclear- and accelerator-based technology and operates the Radiation Effects Facility, RADEF, for the studies of radiation effects in electronics and related materials. RADEF has been an ESA supported European Component Irradiation Facility (ECIF) since 2005. Since then irradiation tests have been carried out not only for ESA and the Euro­pean space industry, but also for other world leading space organizations (e.g. NASA, JAXA, CNES), institutes, companies and universities.
Mikko Rossi and RADEF beam line
RADiation Effects Facility, RADEF

Table of contents

Research group type
Research group
Core fields of research
Basic natural phenomena and mathematical thinking
Research areas
Nuclear and accelerator based physics
Faculty
Faculty of Mathematics and Science
Department
Department of Physics

Research group description

RADEF’s specialty is to provide high penetration heavy ion cocktail beams, protons in wide energy range and energetic electrons. For these the RADEF group utilizes combination of JYFL's ECR ion sources and K-130 cyclotron, and the LINAC electron accelerator. Because the emerging technologies make integrated circuits more susceptible to radiation, the group is expanding its research activities toward the radiation effects in avionics and ground level systems.

Publications

Publication
2020

Direct Ionization Impact on Accelerator Mixed-Field Soft Error Rate

IEEE Transactions on Nuclear Science.
Alía, R. G.
Tali, M.
Brugger, M.
Cecchetto, M.
Cerutti, F.
Cononetti, A.
Danzeca, S.
Esposito, L.
Fernández-Martínez, P.
Gilardoni, S.
Infantino, A.
Kastriotou, M.
Kerboub, N.
Lerner, G.
Wyrwoll, V.
Ferlet-Cavrois, V.
Boatella, C.
Javanainen, A.
Kettunen, H.
Morilla, Y.
Martín-Holgado, P.
Gaillard, R.
Wrobel, F.
Cazzaniga, C.
Alexandrescu, D.
Glorieux, M.
Puchner, H.
Publication
2020

New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

International Conference on Silicon Carbide and Related Materials. Materials Science Forum. Trans Tech Publications.
Witulski, Arthur F.
Ball, Dennis R.
Johnson, Robert A.
Galloway, Kenneth F.
Sternberg, Andrew L.
Alles, Michael L.
Reed, Robert A.
Schrimpf, Ronald D.
Hutson, John M.
Javanainen, Arto
Lauenstein, Jean-Marie
Grider, David
Lichtenwalner, Daniel J.
Raman, Ashok
Arslanbekov, Robert
Publication
2020

SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below

IEEE Radiation Effects Data Workshop.
Coronetti, Andrea
Cecchetto, Matteo
Wang, Jialei
Tali, Maris
Fernandez Martinez, Pablo
Kastriotou, Maria
Papadopoulou, Athina
Bilko, Kacper
Castellani, Florent
Sacristan, Mario
Garcia Alia, Ruben
Cazzaniga, Carlo
Morilla, Yolanda
Martin-Holgado, Pedro
Van Goethem, Marc-Jan
Kiewiet, Harry
Van Der Graaf, Emil
Brandenburg, Sytze
Hajdas, Wojtek
Sinkunaite, Laura
Marszalek, Miroslaw
Kettunen, Heikki
Rossi, Mikko
Jaatinen, Jukka
Javanainen, Arto
Moscatello, Marie-Helene
Dubois, Anthony
Fiore, Salvatore
Bazzano, Giulia
Frost, Christopher
Letiche, Manon
Farabolini, Wilfrid
Gilardi, Antonio
Corsini, Roberto
Puchner, Helmut
Publication
2019

Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT). Proceedings : IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems.
Luza, Lucas Matana
Bosser, Alexandre
Gupta, Viyas
Javanainen, Arto
Mohammadzadeh, Ali
Dilillo, Luigi

Research group

Group leaders

Heikki Kettunen

Staff Scientist (teachresea)
Arto Javanainen

Arto Javanainen

Senior Researcher

Members

Mikko Rossi

Mikko Rossi

Laboratory Engineer

Jukka Jaatinen

Laboratory Engineer

Kimmo Niskanen

Postdoctoral Researcher