Radiation Effects and Industrial Applications

The group specializes in applied research on nuclear- and accelerator-based technology and operates the Radiation Effects Facility, RADEF, for the studies of radiation effects in electronics and related materials. RADEF has been an ESA supported European Component Irradiation Facility (ECIF) since 2005. Since then irradiation tests have been carried out not only for ESA and the European space industry, but also for other world leading space organizations (e.g. NASA, JAXA, CNES), institutes, companies and universities.

Overview

Core fields of research

Basic natural phenomena and mathematical thinking

Research areas

Nuclear and accelerator based physics

Faculty

Faculty of Mathematics and Science

Department

Department of Physics

Research group description

RADEF’s specialty is to provide high penetration heavy ion cocktail beams, protons in wide energy range and energetic electrons. For these the RADEF group utilizes combination of JYFL's ECR ion sources and K-130 cyclotron, and the LINAC electron accelerator. Because the emerging technologies make integrated circuits more susceptible to radiation, the group is expanding its research activities toward the radiation effects in avionics and ground level systems.

Current

Members

Research group

Group leaders

Heikki Kettunen

Staff Scientist (teachresea)

Arto Javanainen

Senior Researcher

Members

Postdoctoral Researcher

Publications

Publication

2018

Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

IEEE Transactions on Nuclear Science.

Witulski, A. F.

Arslanbekov, R.

Raman, A.

Schrimpf, R. D.

Sternberg, A.

Galloway, K. F.

Javanainen, Arto

Grider, D.

Lichtenwalner, D. J.

Hull, B.

Publication

2018

Single-Event Burnout Mechanisms in SiC Power MOSFETs

IEEE Transactions on Nuclear Science.

Witulski, Arthur F.

Ball, Dennis R.

Galloway, Kenneth F.

Javanainen, Arto

Lauenstein, Jean-Marie

Sternberg, Andrew L.

Schrimpf, Ronald D.

Publication

2018

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory

IEEE Transactions on Nuclear Science.

Bosser, Alexandre

Gupta, V.

Javanainen, Arto

Tsiligiannis, G.

LaLumondiere, S. D.

Brewe, D.

Ferlet-Cavrois, V.

Puchner, H.

Kettunen, Heikki

Gil, T.

Wrobel, F.

Saigné, F.

Virtanen, Ari

Dilillo, L.

Publication

2018

Space Radiation Effects in Electronics

Rad-hard Semiconductor Memories. River Publishers Series in Electronic Materials and Devices.

Dilillo, Luigi

Bosser, Alexandre

Javanainen, Arto

Virtanen, Ari

Publication

2017

Application and development of ion-source technology for radiation-effects testing of electronics

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Kalvas, Taneli

Javanainen, Arto

Kettunen, Heikki

Koivisto, Hannu

Tarvainen, Olli

Virtanen, Ari

Publication

2017

Determination of electronic stopping powers of 0.05–1 MeV/u 131Xe ions in C-, Ni- and Au-absorbers with calorimetric low temperature detectors

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Echler, A.

Egelhof, P.

Grabitz, P.

Kettunen, Heikki

Kraft-Bermuth, S.

Laitinen, Mikko

Müller, K.

Rossi, Mikko

Trzaska, Wladyslaw

Virtanen, Ari

Publication

2017

Energy loss and straggling of MeV Si ions in gases

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Vockenhuber, C.

Arstila, Kai

Jensen, J.

Julin, Jaakko

Kettunen, Heikki

Laitinen, Mikko

Rossi, Mikko

Sajavaara, Timo

Thöni, M.

Whitlow, H. J.

Publication

2017

Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence

IEEE Transactions on Nuclear Science.

Javanainen, Arto

Galloway, Kenneth F.

Nicklaw, Christopher

Bosser, Alexandre

Ferlet-Cavrois, Véronique

Lauenstein, Jean-Marie

Pintacuda, Francesco

Reed, Robert A.

Schrimpf, Ronal D.

Weller, Robert A.

Virtanen, Ari

Publication

2017

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

IEEE Transactions on Nuclear Science.

Javanainen, Arto

Turowski, Marek

Galloway, Kenneth F.

Nicklaw, Christopher

Ferlet-Cavrois, Véronique

Bosser, Alexandre

Lauenstein, Jean-Marie

Muschitiello, Michele

Pintacuda, Francesco

Reed, Robert A.

Schrimpf, Ronal D.

Weller, Robert A.

Virtanen, Ari

Publication

2017

Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

IEEE Transactions on Nuclear Science.

Bagatin, Marta

Gerardin, Simone

Paccagnella, Alessandro

Visconti, Angelo

Virtanen, Ari

Kettunen, Heikki

Costantino, Alessandra

Ferlet-Cavrois, Véronique

Zadeh, Ali

Publication

2016

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

IEEE Transactions on Device and Materials Reliability.

Javanainen, Arto

Galloway, Kenneth F.

Ferlet-Cavrois, Veronique

Lauenstein, Jean-Marie

Pintacuda, Francesco

Schrimpf, Ronald D.

Reed, Robert A.

Virtanen, Ari

Publication

2016

Effects of high-energy electrons in advanced NAND flash memories

European Conference on Radiation and Its Effects on Components and Systems. IEEE.

Bagatin, Marta

Gerardin, Simone

Paccagnella, Alessandro

Costantino, Alessandra

Ferlet-Cavrois, Véronique

Virtanen, Ari

Kettunen, Heikki

Wang, Pierre