Radiation Effects and Industrial Applications

The group specializes in applied research on nuclear- and accelerator-based technology and operates the Radiation Effects Facility, RADEF, for the studies of radiation effects in electronics and related materials. RADEF has been an ESA supported European Component Irradiation Facility (ECIF) since 2005. Since then irradiation tests have been carried out not only for ESA and the European space industry, but also for other world leading space organizations (e.g. NASA, JAXA, CNES), institutes, companies and universities.

Overview

Core fields of research

Basic natural phenomena and mathematical thinking

Research areas

Nuclear and accelerator based physics

Faculty

Faculty of Mathematics and Science

Department

Department of Physics

Research group description

RADEF’s specialty is to provide high penetration heavy ion cocktail beams, protons in wide energy range and energetic electrons. For these the RADEF group utilizes combination of JYFL's ECR ion sources and K-130 cyclotron, and the LINAC electron accelerator. Because the emerging technologies make integrated circuits more susceptible to radiation, the group is expanding its research activities toward the radiation effects in avionics and ground level systems.

Current

Members

Research group

Group leaders

Heikki Kettunen

Staff Scientist (teachresea)

Arto Javanainen

Senior Researcher

Members

Postdoctoral Researcher

Publications

Publication

2025

Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800 V and 4500 V SiC Power MOSFETs

IEEE Transactions on Nuclear Science.

Sengupta, A.

Martinella, C.

Ball, D. R.

Niskanen, K.

Senarath, A. S.

Islam, S.

Harris, P. M.

Hutson, J. M.

Osheroff, J. M.

Sternberg, A. L.

Kettunen, H.

Kosier, S. L.

Grossner, U.

Javanainen, A.

Galloway, K. F.

Schrimpf, R. D.

Witulski, A. F.

Publication

2025

Gate Current Stress for Detecting Neutron-Induced Degradation in SiC Power MOSFETs

IEEE International Reliability Physics Symposium.

Niskanen, K.

Javanainen, A.

Kettunen, H.

Cazzaniga, C.

Kastriotou, M.

Frost, C.

Publication

2025

Heavy-Ion Testing on Power MOSFETs at Gate Switching Mode for COTS Up-Screening

IEEE Transactions on Nuclear Science.

Bae, Dongwoo

Lee, Woojun

Lim, Jangkwon

Kettunen, Heikki

Kim, Woongki

Lee, Hyun-jin

Lee, Seungmok

Woo, Seungjoo

Cho, Changhee

Kih, Joongsik

Kim, Kiseog

Yong, Sang-soon

Kim, Youngboo

Publication

2025

Multiple Cell Upsets in the Configuration RAM of a 7-nm FinFET SoC under Heavy Ions

IEEE Transactions on Nuclear Science.

Mayo, Jorge

Durán, Cristina

Cueto-Rodríguez, Juan

Franco, Francisco J.

Kettunen, Heikki

Publication

2025

Proton Energy Dependence of SiC Power MOSFET Single Event Burnout Sensitivity

IEEE Transactions on Nuclear Science.

Niskanen, K.

Javanainen, A.

Martinella, C.

Hajdas, W.

Grossner, U.

Kettunen, H.

Publication

2025

Single Event Effects of SiC power MOSFETs : from neutron interaction to destruction at the die level

IEEE Transactions on Nuclear Science.

Germanicus, Rosine Coq

Michez, Alain

Niskanen, Kimmo

Chaudhary, Mahima

Bascoul, Guillaume

Chazal, Vanessa

Wrobel, Frederic

Boch, Jerome

Publication

2025

Temperature Dependence of Heavy Ion Induced Leakage Current in SiC Power MOSFETs

IEEE Transactions on Nuclear Science.

Niskanen, K.

Martinella, C.

Sengupta, A.

Harris, P. M.

Witulski, A. F.

Kettunen, H.

Javanainen, A.

Publication

2024

AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs

Solid State Phenomena.

Germanicus, Rosine Coq

Phulpin, Tanguy

Niskanen, Kimmo

Michez, Alain

Lüders, Ulrike

Publication

2024

Methods for Proton Direct Ionization SEU Characterization and Orbital Error-Rate Estimation

IEEE Transactions on Nuclear Science.

Glorieux, Maximilien

Bonnoit, Thierry

Lange, Thomas

Gaillard, Remi

Nofal, Issam

Artola, Laurent

Poivey, Christian

Levacq, David

Rey, Romain

Kettunen, Heikki

Polo, Cesar Boatella

Publication

2024

SiC MOSFET structure at the die level with AFM sMIM Mode

IEEE Workshop on Wide Bandgap Power Devices & Applications. ... IEEE Workshop on Wide Bandgap Power Devices and Applications.

Coq Germanicus, Rosine

Chaudhary, Mahima

Niskanen, Kimmo

Larose, Xavier

Chazal, Vanessa

Bascoul, Guillaume

Publication

2023

Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs

IEEE Transactions on Nuclear Science.

Niskanen, Kimmo

Kettunen, Heikki

Lahti, Mikko

Rossi, Mikko

Jaatinen, Jukka

Söderström, Daniel

Javanainen, Arto

Publication

2023

Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs

Materials Science Forum.

Martinella, Corinna

Bathen, Marianne

Javanainen, Arto

Grossner, Ulrike